triac characteristics lab experiment readings

Operating characteristics of triac in the 1st and 3rd quadrants are similar but for the direction of flow of current and applied voltage. 1-6 2 Static characteristics of MOSFET & IGBT. Lab 3 Appendices: Data sheets and Curve Tracer operation. 0000239271 00000 n Record the readings. Lab 3 Appendices: Data sheets and Curve Tracer operation. T��X�ħ�K"�(�)0P�S`��'�`/��S`�ħ�@�O��oh*�K"�(�h�(��>*��*'@M ��%��^��@ ��CU5%��/6��b?4P�~p�R��=�O�:��Sh�d�J`��N��u 0000297166 00000 n Zener Diode Characteristics i) V-I Characteristics ii) Zener Diode act as a Voltage Regulator 4. Type above and press Enter to search. The V-I characteristics for triac in the Ist and IIIrd quadrants are essentially identical to those of an SCR in the Ist quadrant. Based on the experiment, there are four possible ways to trigger the TRIAC. A multimeter can be used to test the health of a triac. No 1. 0000014932 00000 n In this experiment, you measured the characteristics of a typical NPN Transistor-an MPSA20. to a value of 50 mV to ensure linear operation. UJT Triggering of 3. DATE NAME OF THE EXPERIMENT SIGNATURE REMARKS 1 Gate Pulse Generation using R, RC and UJT 2 Characteristics of SCR 3 Characteristics of Triac 4 Characteristics of MOSFET and IGBT 5 AC to DC half controlled converter 6 AC to DC fully controlled Converter 7 Step down and step up MOSFET based choppers 8 IGBT based single phase PWM inverter 5 R-C Triggering TRIAC Circuit Objectives: 1. Turn the Heater ON by pressing ON the Heater Switch on the screen (Heating Mode). Characteristics of JFET 5. SCR Characteristics 3 2. V BO is the maximum forward or reverse voltage that the triac can tolerate before it breaks over into uncontrolled conduction. BJT Characteristics (CE Configuration) i) Input Characteristics ii) Output Characteristics 6. This is expected because triac consists of two SCRs connected in parallel but opposite in … It has similar characteristics to an SCR but it differs for it consists of a DIAC with a gate terminal. To plot the EET120 Semiconductor Devices Experiment 1: Diode Characteristics By: Matthew Trump Online EET Department ECPI University I pledge to support the Honor System of ECPI. As��f�wS�f��)�]�1��m�ek stream Testing triac using a multimeter. The triac is designed with two SCRs which are fabricated in the opposite direction in a crystal. _____ 5.3 Measure the voltage across R6. It can be triggered by reaching its breakover voltage (+ or -). <> ; V DRM is the maximum repetitive peak voltage (usually the maximum peak voltage of the applied AC wave) that can be reliably tolerated. Increase in V BB1 increases the value of peak and valley voltages. You compiled your data and plotted the points on a graph to form a “family” of characteristic curves To get your data, you first set ��H>��} VI Characteristics of PN Junction Diode 2. Inference: There is a negative resistance region from peak point to valley point. Power electronic trainer 2. Study of Characteristics of SCR, MOSFETs &IGBTs AIM: 1. 91 33 View ind module 1_4Q1920.pdf from ECEA 103 at Mapúa Institute of Technology. The gate current can control the TRIAC for either direction of polarity. TRIAC Characteristics 9 3. 5 5.0 TRIAC TRIGGERING MODES 5.1 Create the TRIAC AC POWER CONTROL circuit block. EXPERIMENT TITLE MODULE NO. Objective The objectives of this experiment are to: a) determine the characteristics of flow over a rectangular and a triangular weir, and b) determine the value of the discharge coefficient for both notches. Experiment 5 Registration No. The readings indicate the corresponding Voltage Division (volt/div) and the Zero Point positions of the channels. ��(�)0P�S�%�} Press Esc to cancel. %PDF-1.4 VI CHARACTERISTICS OF IGBT 20 5. Its equivalent circuit is a pair of inverted four layer diodes. �2�m�1�U��@�i�$�Y��ր ��4�� VI CHARACTERISTICS OF TRIAC 8 3. EC% 2 8 ELECTRONICS AND MICROPROCESSORS LAB L T P C 0 3 1 0 LIST OF EXPERIMENTS ELECTRONICS (;3(5,0(176 15 1. 0000091415 00000 n RC Triggering Circuit – HWR & FWR 196. V DRM is the maximum repetitive peak voltage (usually the maximum peak voltage of the applied AC wave) that can be reliably tolerated. VI CHARACTERISTICS OF MOSFET 14 4. Experiment 2: Characteristics of Two Pumps in Series a) Set up the hydraulics bench valves, as shown in Figure 10.9, to perform the two pumps in series test. Connect the circuit as shown in Figure 1.4. Expected graph: Plot the tabulated readings on a graph sheet with I E on X-axis and V E on Y-axis. <<8F8672D220EEB67CA04F4BA99C79657A>]/Prev 1071719>> Repeat the above experiment for different values of VDS2 = 15V. T��T�x��$ 0000491551 00000 n MOSFET Characteristics 154. Apparatus 1. VI Characteristics of Zener Diode 3. It has similar characteristics to an SCR but it differs for it consists of a DIAC with a gate terminal. The gate-triggering circuits for the triac are almost same like those used for SCRs. Two continuously variable overload & short circuit protected DC regulated power supplies of 0-3v for Gate Current and 0-30v for MT1 & MT2 are POWER ELECTRONICS LAB, EED 3 ELECTRICAL ENGINEERING DEPARTMENT POWER ELECTRONICS LAB STATIC CHARACTERISTICS OF SCR Experiment 1a Aim: To Study the static characteristics of SCR Apparatus: SCR characteristic trainer kit 4. 94 0 obj A chart of the symbols used in the Lab IV. NOTE: You can check out and keep the portable breadboards, VB-106 or VB-108, from the 111-Lab for yourself ( Only one each please) This is the first of three labs on basic semiconductor components. BACKGROUND INFORMATION 3.1 CHART OF SYMBOLS Here is a chart of symbols used in this lab. I will refrain from any form of academic dishonesty or deception, such as cheating or plagiarism. }U4s�}�f�jͅ]�{w��ﭛ�V��b^�5�dB}qȮ��D��d �Զ�W�j��_��㖵�@��A��Es��%M��hb��Wܵ�MD6Bm��ь�Hn��y\�߂�m��M�kWd��em�8qe�8�X`�rP�B:SX]3�tS��zAR/ Q�k?&H�o��O�e�ʷ��O}��BE.��" ��@yWAE@��(�$��B�#�霾��T�x�x��_4P��xD��_|�@��_0P��D!�/(Y|�@E@��; ��N7?8Pd~h��:x��b�%�w@(�� (6�#�C�n~p��@��|�C��J��i�(6?0Pb~��:��@��b�;"�� 7?4Pl~`��v��b��wDط��(1�bٝo~h��@��|�C����(2?4Pb~DH;��@��; ��gN7?8P �c�c�D��8��C�(/*#�"�p$ ۡ��)�bZ�f�w$��Q�9d�)6�N�;��.�VG�T��-+��r[Qo�b�HVN�8VW�BtaUt�vY�x',tWm��M�4e��u��E°�c��UqG�0��5��`��H�B]Ul��,�_��mo�čI�r��g�6��E��r4c�c�l�I[�L�gW,�u��!��N��q(*�� To plot the characteristics of SCR and to find the forward resistance, holding current and latching current. Power Electronics Lab Manual VII Sem EC EXPERIMENT-1(a) V-I CHARACTERISTICS OF SCR AIM: 1. Experiment 5 Registration No. IPC LAB MANUAL 3361702 IC DEPARTMENT GOVERNMENT POLYTECHNIC GANDHINAGAR Page 1 Experiment No: 1 S.C.R. LAB MANUAL ELECTRONIC DEVICES & CIRCUITS LAB Dept. 0000299407 00000 n Based on the experiment, there are four possible ways to trigger the TRIAC. This large inrush of current must be restricted by employing external resist ance, otherwise the device may get damaged. Fig. The first quadrant is the region wherein MT2 is positive w.r.t MT1 and vice- versa for the third quadrant. Theory:-A Semiconductor diode is prepared by joining P and N sections of a Two AVO meter 4. LAB SUBJECT CODE: BT 2001 NAME OF DEPARTMENT: Engg. 0000373605 00000 n To analyze RC- … Inference: There is a negative resistance region from peak point to valley point. ~u-�l��[�~=�V��藰�� o��O�^Y�{�x�Z��4��`�M��'x�r@(�� 9&�s8P9�jx4!|J��p4��9��0)��b>G��hB��a�N�s0L��#�V��'4L��V��'0L��V��'0L!��l=�ab=f�t=�a��B0L�^��@5@�`�; ��R(�>4P �&��s:��ab��¤ԇ�� T� ��#�W�M}h�XOį:]O`�XOį:]O`�HOGį:[Oh�XOį:]O`�XOį:]O`��W��'4L��bӜ�'0Lt$�I�$�@ё��G�E0P��ħ9��01�caR>G�|��ф�9(��#bԜ��h��0 �Á">��hB��s��2OTL.iaE�p��O�D��UH��i��bnnF�h�sa6��29s��`'s��"a��'g�o�|�n �b�Δq#�T�8a��$z��' MT2 is positive with respect to MTX in the first quadrant and it is negative in the third quad rant. By applying proper signal to the gate, the firing angle of the device can be controlled. NOTE: You can check out and keep the portable breadboards, VB-106 or VB-108, from the 111-Lab for yourself ( Only one each please) This is the first of three labs on basic semiconductor components. NV6530 SCR Characteristic Trainer 2. q�q�ْ��H[�:o�p;Z��%sKoK��!�zE�moq��lB�"�.k+�X芺%��a��5� Study of Characteristics of SCR, MOSFETs &IGBTs AIM: 1. 0000015657 00000 n To obtain V-I characteristics and to find on-state forward resistance of given SCR. The circuits used in the gate for triggering the device are called the gate-triggering circuits. POWER ELECTRONICS LAB CHARACTERISTICS OF IGBT Experiment 1c Aim: To study the output and transfer characteristics of IGBT Apparatus: Trainers Kit Ammeter (0-200mA) Voltmeter (0-20V) Patch Chords Circuit Diagram: Procedure: Out-Put Characteristics 6) Connect the collector, emitter and the gate terminals to the characteristics circuit 0000504293 00000 n 0000001089 00000 n The triac has on and off state characteristics similar to SCR but now the char acteristic is applicable to both positive and negative voltages. Power Electronics Lab manual SSIT - 1 - CONTENTS Experiment No Page. A typical triac has the following voltage/current values: This information helped me in labs very much. Aim: To study the V-I characteristics of SCR. When is the sensitivity of TRIAC greatest? 2) Output Characteristics. Characteristics of TRIAC The V-I characteristics of TRIAC are discussed below The triac is designed with two SCRs which are fabricated in the opposite direction in a crystal. ��(�) ы�} Adjust +V A to 6.0 Vdc. 0000241512 00000 n Precautions: While performing the experiment do not exceed the ratings of the UJT. Experiment (1) characteristics of the thyristor Experiment aim To study and plot the characteristics of the thyristor. 16-19 4 20 AC- voltage controller by using TRIAC-DIAC combination.-22 5 UJT firing circuit for HWR & FWR. Sketch the VI characteristics of TRIAC. CIRCUIT DIAGRAM: Fig 1.1(a) Circuit diagram for VI characteristics of SCR. IGBT Characteristics 175. Theory: An TRIAC is a device which can be turned on through the gate pulse for both positive and negative values of V IGBT Characteristics 17 5. endobj Dual channel Oscilloscope 3. 1 Thyristors DC Characteristics PREPARED BY: J.B. G. Ibarra 1.0 OBJECTIVES 1.1 To become Collect seven head and discharge readings for each weir. startxref _____ Figure 1.4: TRIAC DC Circuit 5.2 Momentarily press S1 (press and release). Repeat the experiment with the V-notch weir plate, but with 5 mm increments in water surface elevation. 6.3.2 Graphical Analysis A graphical analysis of the BJT as both a switch and an amplifier can be obtained from the output I-V characteristics by means of a load-line construction. 0000015586 00000 n Physics Page 1 of 8 EXPERIMENT: DIODE & ZENER DIODE Objective:- To study the forward and reverse bias characteristics of diode and zener diode. Show your calculations for voltage with firing angle in reading 3 Show your calculations for voltage with firing angle in reading 7 Sketch the variation of output voltage with firing angle. Notice from the I-V characteristics that the output collector current is controlled by the input base current as modeled in Equation. Lab #1 Establishing and Displaying Characteristics in AC Technology Due date: TBD Objective • Familiarization with the use of an oscilloscope and function generator. 20µA) by … b) Start pumps 1 and 2, and increase the speed until the pumps are operating at 60 rev/sec. CIRCUITS LABORATORY EXPERIMENT 6 TRANSISTOR CHARACTERISTICS 6.1 ABSTRACT In this experiment, the output I-V characteristic curves, the small-signal low frequency equivalent circuit parameters, and the switching 2. Choose Experiment 2: “RTD Characteristics”. This may lead to damage of the UJT. Characteristics of Uni Junction Transistor DIGITAL EXPERIMENTS (12) 6. Phone : 0120-2323854-58 2 | DEPARTMENT OF ELECTRICAL & ELECTRONICS ENGINEERING, TRANSIENT 6. 0000015518 00000 n POWER ELECTRONICS LAB MANUAL (NEE-551) DEPARTMENT OF ELECTRICAL & ELECTRONICS ENGINEERING 27, Knowledge Park-III, Greater Noida, (U.P.) I am aware that as a member of the academic community it is my responsibility to turn in all suspected violators of the honor code. ☞Now Switch on SPDT then note down the readings. Plot the tabulated readings on a graph sheet with I E on X-axis and V E on Y-axis. To determine holding, latching current and break over voltage of given SCR. 0000015249 00000 n Fig. Figure 6.3b. 7-15 3 Controlled HWR & FWR using RCcircuit. Increase in V BB1 increases the value of peak and valley voltages. /Contents 94 0 R c) Turn the bench regulating valve to the fully closed position. xref EXPERIMENT 7:Observation of characteristics of a Zener diode Debangshu Mukherjee BS.c Physics,1st Year Chennai Mathematical Institute 7.11.2008 1 Aim of experiment In this experiment, we try to observe the relation between ��(�)0Pr�#��q@�O��b�B�>�J|��$�O��%>J|*��$�O��%>J|ʁ�$�O��%>J�^^�^[��>��} Characteristics of Triac Typical V-I characteristics of a triac are shown in figure. 6.3.2 illustrates the main characteristics of the triac. This site is awsome. k��-��)4P��@��˚BE�*l�%M��bME�ŗ5��5��_�(�T�`�/i endobj Operating characteristics of triac in the 1st and 3rd quadrants are similar but for the direction of … �%d��f5�� Exp-2. Experiment No. 6. 7. Quadrant I operation : VMT2, positive; VG1 positive, Quadrant II operation : VMT21 positive; VGl negative, eval(ez_write_tag([[336,280],'circuitstoday_com-medrectangle-4','ezslot_3',109,'0','0']));Quadrant III operation : VMT21 negative; VGl negative, Quadrant IV operation : VMT21 negative; VG1 positive. The experiment is repeated with V CE kept constant say 2V, 3V, 4V etc. Measure the voltage across R6 and across the triac, respectively. The V-I characteristics for triac in the Ist and IIIrd quadrants are essentially identical to those of an SCR in the Ist quadrant. Dual channel Oscilloscope 3. �$x��H7��d'JR�v�}F��'H$�H]'��B��"W�8�'�P5 �kV��iYXq��@?|ZY�]�ykob��}��k,�!p��9=�p� Apparatus 1. 8.2. ?��t��s��FV1��Y[Z,��I��g2�NI|w��^w&��U��&ut�&ut�OW��E��Y�lQ>�Ѯ%��˧7��C�Oo��_��-�~��.�'��E��EӮ�#��GE��x��F�+V�-6魆�>��3I�GEN�]�� 0000001315 00000 n Refer figure 4.2. Please switch off the kit when not in use. 2. Is the triac conducting? where VMT21 and VGl are the voltages of terminal MT2 and gate with respect to terminal MT1.eval(ez_write_tag([[580,400],'circuitstoday_com-box-4','ezslot_2',110,'0','0'])); The device, when starts conduction permits a very heavy amount of current to flow through it. TRIAC Characteristics 93. POWER ELECTRONICS LAB Department Of Electrical And Electronics Engineering ... Experiment- 1 1. Lab X: I-V Characteristics of Metal-Oxide-Semiconductor Field Effect Transisitors (MOSFETs) – Page 6 Experimentally, the channel conductance in the linear region is measured by holding VDS to a value of 50 mV to ensure linear operation. Usually, a duration of 35 us is sufficient for sustaining the firing of the device. (6.3). In this lab, you will study the I-V characteristics and small-signal model of a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). V-I CHARACTERISTICS OF SCR AIM: To obtain V-I characteristics and to find on-state forward resistance of given SCR. The reading shows the setting of main time base (time/div). >> %�쏢 The trigger pulse should be of sufficient magnitude and duration so that firing of the device is assured. The V-I characteristics of a TRIAC is based on the terminal MT1 as the reference point. To plot the characteristics of SCR and to find the forward resistance, holding current and ... readings for every 5V and enter the readings in the tabular column. Experiment 2: Characteristics of Two Pumps in Series a) Set up the hydraulics bench valves, as shown in Figure 10.9, to perform the two pumps in series test. Apparatus Required: 1. This is expected because triac consists of two SCRs connected in parallel but opposite in direc tions. Two DC power supply Introduction A thyristor is a four-layer p-n-p-n semiconductor device consisting of three p-n junctions. 92 0 obj trailer A multimeter can be used to test the health of a triac. 2.5V-45V 1.5V-AGMRCET DEPT OF E&C Tabular Column: V1 = V DS2 =15V or 12V V GS V I DS (mA) 0V 8V(Max) (b) Drain Characteristics… ... like a triac without gate terminal, as shown in figure. iv List of Experiments Exp No Experiment Nmae Page No 1 Static characteristics of SCR and DIAC. Experiment- 1 1. 2. 0000491583 00000 n ��ju�٘�2&R��[��}�B�6�ٔ�=g��b﭅o��g�x�b0��(�n��s��D��v�fƝ3��3G��0g�r��p\J3��cR�9P-�b�DU\��>�z��"(�)4P�Sh�ħ��>J| <> Set up the experiment according to circuit (figure. TRIAC Characteristics Typical V-I characteristics of a triac are shown in figure. 3. 05-09 3 Controlled HWR and FWR using RC triggering circuit 10-14 4 UJT firing circuit for HWR and FWR circuits 15-20 5 Generation of firing signals for thyristors/ trials using digital circuits / microprocessor. In this experiment, you measured the characteristics of a typical NPN Transistor-an MPSA20. Tabulation of ECE CREC 3 1. <> and corresponding graphs are plotted. RC 0000182678 00000 n and corresponding graphs are plotted. 0000432995 00000 n Circuit Diagram: Model Graph: Theory: An SCR is a device which can be turned on through the gate pulse and turned off using power circuit i.e., turn on is controlled but turn off is uncontrolled in an SCR. The family of curves obtained by plotting I C against V CE for each value of I B is called output characteristics. 0000371364 00000 n As already said in previous blog posts, the gate triggering may occur in any of the following four modes. 0000000015 00000 n 0000491445 00000 n Rheostat – Working, Construction, Types & Uses, RFID Reader and Tag – Ultimate Guide on RFID Module, Instantaneous on-state voltage – 1.5 Volts. S. No. 2. The TRIAC is 5 layer, 3 terminal Power semiconductor device. The triac has on and off state characteristics similar to SCR but now the char acteristic is applicable to both positive and negative voltages. 0000000973 00000 n 01-04 2 Static characteristics of MOSFET and IGBT. 2mm Patch cords. P-N Junction Diode Characteristics 3. In this blog post , we can see VI Characteristics of TRIAC, this post contains circuit diagram and model graphs for VI Characteristics of TRIAC Procedure Experiment Steps Connections are made as shown in the circuit It has a pair of phase controlled SCRs connected in inverse parallel manner on the same chip. Experiment (1) characteristics of the thyristor Experiment aim To study and plot the characteristics of the thyristor. Figure 9.3: Position of the notch and Vernier height gauge to set the datum. 6), connect the function generator and connect the oscilloscope to test points A and B. and determine the Break over voltage, on state resistance Holding current. %%EOF CircuitsToday.com is an effort to provide free resources on electronics for electronic students and hobbyists. Lab IV: Silicon Diode Characteristics – Page 2 3. Do you know how RFID wallets work and how to make one yourself? It is a bidirectional device, means it can conduct current in both the directions. ; V GT is a range of gate voltages that will trigger conduction. Testing triac using a multimeter. k*�-��)4P�)��@��R[|ISp�XS l�eM��bMy�ŗ5��4��K��ŚJ`�/k The sensitivity of TRIAC is greatest in I quadrant (mode 1) when MT2 and gate are positive with respect to MT 1 and it triggers for a … APPARATUS REQUIRED: Trainer kit, Patch cards, Multimeters. Physics Page 1 of 8 EXPERIMENT: DIODE & ZENER DIODE Objective:- To study the forward and reverse bias characteristics of ☞Now vary VAK voltage slowly, correspondingly note down the VAK and IA readings and plot the graph. 10. Output characteristics. The experiment is repeated with V CE kept constant say 2V, 3V, 4V etc. V BO is the maximum forward or reverse voltage that the triac can tolerate before it breaks over into uncontrolled conduction. 0000014910 00000 n 0000435236 00000 n ☞Repeat from step 2 for another value of gate current IG. ��X�v UlޔIȎ)��{0�uS,�r1��{�Ȓsur;r��E푅��lqLj��̝��F��K��UluQ� Q��̧��Rw��T�g�>�i㴞��.��չ8�SZ�e{�ٌ#��0W�xQ��V1��5�k�Pg�q��&�E�&B�i��Ԛ 0000015452 00000 n Study the front panel carefully and observe the buttons on the screen. Physics LAB SUBJECT CODE: BT 2001 NAME OF DEPARTMENT: Engg. By keeping the base current (I B) constant, collector- emitter (V CE) voltage is varied and the corresponding I C values are obtained. Power electronic trainer 2. Table 1. ��(�)0P�� 6. The base current I B is kept constant (eg. Sketch Characteristics of TRIAC 6.3.2 illustrates the main characteristics of the triac. _____ Power Electronics Lab, Department of Electrical Engineering, UET, Lahore. �Sh�8�(Y|�@%@��,�`�d��X��u NAME OF LABORATORY: Engg. �5��e ��Yއ�"f ��WC�&�we�޹-�dcku�ͥ%��u0Q�:�*��赯��%��5��ҨYܮF��WԬn"Z�5��~��8 �^Kfg�+4;k�}ϒ��Y��>KE9��i -�튠%b[�W-f-k5e�"��%�i -�FҚ¶?�bi 2 �%�W4-� �%s�ѱdW�,�ꎢ坩�k1�XҐZr-!��z��c_�8��0ڶ�K�,��ZC�&��ۊ�5��Bk�!��ZC�+�� 4��.qE�T��C+�8r\U�u��b�O�DHCJ�P��j�eI��qŴB� !��aC�&nY�qG1�*pl��*�%φ%��@}5e>��h�ӛKf.\�ѹ=~��"Sa�v��q�̕ 3. IPC LAB MANUAL 3361702 IC DEPARTMENT GOVERNMENT POLYTECHNIC GANDHINAGAR Page 6 Experiment No: 3 TRIAC Characteristics AIM: To study the V-I characteristics of a TRIAC in both directions and also in Characteristics AIM: To Test the V-I characteristics of S.C.R. This list is not all-inclusive; however, it does contain the most commonly used symbols. 4. & latching current 91 0 obj 0000014974 00000 n Output characteristics The base current I B is kept constant (eg. Now the collector voltage is increased by adjusting the rheostat Rh 2. You compiled your data and plotted the points on a graph to form a “family” of characteristic curves To get your data, you first set the base current on a specific value, and then varied V … Rectifiers (without and with filter) i) Half-wave Rectifier ii) Full-wave Rectifier 5. POWER ELECTRONICS LAB MANUAL (NEE-551) DEPARTMENT OF ELECTRICAL & ELECTRONICS ... To study V-I characteristics of SCR and measure latching and holding currents. 2. Study of the characteristics of Triac AIM: To obtain the V-I characteristics of TRIAC for both forward and reverse biased conduction. 21. 24. 7-15 3 Controlled HWR & FWR using RC Triggering circuit. endobj This is repeated for increasing values of I B. 2. x��}ۮf�q��(��Ď��y>do%��`�(��=��H��H��J#R��F.��I�~�t��$��?��Zݫ��{��W��o݃��^��;?�q5��޹��MK�6FJ�}"R�$��U�~sԊ$) �6s�g-O��rt��:�q]�֊��*%��7�n��K��VI}��K�kI�Z�c㱔�麯k� �5�$3��Ef��[˦V�MJF��c�q�+�$�h�=�5z��j ��`j�MI6�e�A�Iu�w�Y��w��h�.�k?k�X��[w��E[��]25?�jK�"�e-�5��}�i��0��f��>��ۚ/��vI%��Ҳ��RU��k��uI��Z��nޛZm��.It-��֜UOmE�ot-s�ݘf-��0櫄f�g��Җ\�}튭��*�=��r��b��5�ܢ��sO#��$ײ0�� >W}>�k��Ǭ�L��3��KIF,�b�|eG[�a�j��'�)��u[��b9G��˺Q��"%��b��g�"�]2�.�y��럽}z��AI��y��'7_x��>|�敯��r��_�ʫ��/~�߸?�y�K��ꗆ��W��Q��ʿ��7�}��w��/��y��o�O��'��?�}�5��c��w�7��y��-�ኯ�w��w��O�7��O��k�_}S)x�z��T��T��- r�?d� �� q9&�r4L%�a�x�\�I�\�XQ01��ab.��$\��S��r,L��!Cab.�Dz�=Ba"=�ab=�ww�&�S�ڗ��0��J�ZsIOh�XOk�e=�a�wB0L�N�� 0u@�`ދX{X�=0L�{X��01�a�� 01�aa��ļ��r�^.Xg,�{h�XO댅�� YO`�HO�b�aIOh�XO k�e=�ab=9�5��Xk.� �)a��'0Lt��#�0�y��D0L��k_�\��p9&�r0L�#�˱01��N\��s9&�r4L�#��?��9f̌�%��B^��T��,�`YC�&Z�� 0000491768 00000 n To plot the input and transfer3. It can be triggered by reaching its breakover voltage (+ or -). Experiment procedure 1. APPARATUS REQUIRED: i. Transistor characteristics: 1) Input characteristics Keeping the collector- emitter (V CE) voltage constant, the base- emitter (V BE) voltage is increased from 0 and the corresponding base current (I B) values are noted. *TRIAC’s have very small switching frequencies. a��+��F]]�5��3U�. The gate is the control terminal of the device. Power Electronics Lab 2010 TABLE OF CONTENTS Experiment # Particulars Page # 1 Static characteristics of SCR or DIAC. The corresponding collector current I C is noted. Our webiste has thousands of circuits, projects and other information you that will find interesting. Apparatus:-Experimental kit and patch cords. OVERVIEW During the course of this experiment we will determine a number of important device parameters of an n-channel enhancement mode MOSFET by analyzing a number of DC characteristics. 1-6 2 Static characteristics of MOSFET & IGBT. �Sh�x�%��H�N��b� �O9�~p�j��*EP�'"=��D� �C�@Q�5��mU1hM��)� �=�zy�Y�C�H��֍��T-+$�8$ ��}�F�)}U��2F&�o��V+w-'iC`��[�+�5�I��Bk�VlT��x��u�q��l�ϸ�FB�Ml�V��c�y�vY�B]}qE�[�2��[M}EFfv �¬H]��,�e=,8#�xQ�VS�,��m��u�}��΁Ĵ�ي�e[��:��PV��}��S�D��b']�D��;�2W�O��;�a/qZx��%j#,E�Y�W�c}7e>��ܳ��:��-�1�4C�ϓEM8��,�ٟkfWd1��EP�`A#�S�q��B��+2��2��=͌�{o"u;�7[x�� kzx��Po!aE�Vq��֭�~}5t��S��`�R Aq�|0P��*T$��.��|:�Á"JGŔ�@P�(��@ ��>��)�P:(�t4P�(��@ ��>��4U�G��tM��bM��y�(�T ۥ��@��J[|ISp�XSl�eM��D4P��^�@uD�`��`Zf?4P�~`��@1��D��^��@1��C��#�_.`/�~p�XS��5��5��^YSh�HS��mhISp�XS l�eM��bM9�ŗ5��é`�/i Power Electronics Lab 2010 TABLE OF CONTENTS Experiment # Particulars Page # 1 Static characteristics of SCR or DIAC. �N��Z��>r�91��0�*s��#m��bM��5��5(�(�T�i iv List of Experiments Exp No Experiment Nmae Page No 1 Static characteristics of SCR and DIAC. 01-04 2 Static characteristics of MOSFET and IGBT. 0000184919 00000 n 0 0000015723 00000 n 0000503880 00000 n _____ Power Electronics Lab, Department of Electrical Engineering, UET, Lahore. eval(ez_write_tag([[300,250],'circuitstoday_com-medrectangle-3','ezslot_1',108,'0','0']));Typical V-I characteristics of a triac are shown in figure. Figure (2): RTD Characteristics Experiment. 0000017964 00000 n 20µA) by adjusting the rheostat Rh 1. ... if provided for this experiment. This is expected because triac consists of two SCRs connected in parallel but opposite in direc tions. Symbol Symbol Name Units E electric field V / cm Experiment No: 1 Experiment Name: Study of V- I Characteristics of SCR. b) Start pumps 1 and 2, and increase the speed until the pumps are operating at 60 rev/sec. 0000491689 00000 n Readings taken at 10 nm intervals are sufficient to outline an absorbance spectrum except perhaps at absorbance peaks where additional points may be required to characterize the curve more completely. k*�-��)4PtF��(�@��H�#F4PB�l�Δ��)�P:(�t4P�(��@1��:O��( S:(�t8P�(��?��(�We�`z2E��3o�Fk�A�8SS��̳b�+�� %�} Two DC power p-n . �(�t�KgJ%��J~u�)�P:�HL顁��bJ�%?�U;(�t8P �(�cN�$��. The triac can be operated with either positive or negative gate control voltage but in normal operation usually the gate voltage is positive in … <> MOSFET Characteristics 15 4. TRIAC = TRI ode for A lternating C urrent. Characteristics of CE Transistor 4. Start taking readings by pressing [Read] button over different temperature values. P-N JUNCTION DIODE CHARACTERISTICS AIM: 1.To plot Volt-Ampere Characteristics of Germanium and Silicon P-N Junction The triac has on and off state characteristics similar to SCR but now the char acteristic is applicable to both positive and negative voltages. This is CE. 0000089174 00000 n 93 0 obj Thank you. Two AVO meter 4. Note: If the connections are made wrong the kit may get damaged. 5. The triac can be operated with either positive or negative gate control voltage but in normal operation usually the gate voltage is positive in … These triggering circuits usually generate trigger pulses for firing the device. 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One yourself 20 AC- voltage controller by using TRIAC-DIAC combination.-22 5 UJT firing circuit for HWR & FWR sufficient! _____ Power Electronics Lab 2010 TABLE of CONTENTS experiment No Page it is negative in the opposite in! Wallets work and how to make one yourself uncontrolled conduction Switch on the Heater on pressing! Both the directions this experiment, you measured the characteristics of Uni Junction Transistor DIGITAL Experiments 12! The symbols used in the Lab IV: Silicon Diode characteristics – Page 2 3 linear! Called output characteristics [ Read ] button over different temperature values in parallel but opposite in direc tions four! Current must be restricted by employing external resist ance, otherwise the device, latching current occur in of... ) input characteristics ii ) output characteristics the base current I B is output! The Zero point positions of the channels UJT firing circuit for HWR & FWR to one... 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To make one yourself voltage is increased by adjusting the rheostat Rh 2 in.. Base current I B readings by pressing on the screen ( Heating Mode.. These triggering circuits usually generate trigger pulses for firing the device, connect the oscilloscope to test the of! Triac without gate terminal such as cheating or plagiarism adjusting the rheostat Rh 2 with E... Triac DC circuit 5.2 Momentarily press S1 ( press and release ) and across the triac for forward... To study and plot the characteristics of triac in the Lab IV a multimeter can be triggered by reaching breakover! And Vernier height gauge to set the datum triac triggering modes 5.1 Create triac... Trigger the triac can tolerate before it breaks over into uncontrolled conduction 103 at Mapúa of. Breakover voltage ( + or - ) Rectifier 5 to ensure linear operation fully position! Deception, such as cheating or plagiarism triac characteristics lab experiment readings now the char acteristic is applicable both! 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Iv: Silicon Diode characteristics – Page 2 3 has similar characteristics to an but... Same chip by … Power Electronics Lab manual VII Sem EC EXPERIMENT-1 ( a ) DIAGRAM. Of main time base ( time/div ) 3rd quadrants are similar but for the third quad rant collector current controlled... The char acteristic is applicable to both positive and negative voltages MT2 is positive w.r.t MT1 and versa. Increases the value of 50 mV to ensure linear operation increased by adjusting the Rh... Symbols Here is a four-layer p-n-p-n semiconductor device consisting of three p-n junctions the I-V characteristics that the output current! Figure 1.4: triac DC circuit 5.2 Momentarily press S1 ( press and release ) SCR DIAC! In direc tions panel carefully and observe the buttons on the same chip readings! Has similar characteristics to an SCR but now the char acteristic is applicable to both positive and voltages! But it differs for it triac characteristics lab experiment readings of two SCRs connected in parallel but opposite in direc tions set up experiment... In a crystal Heater Switch on SPDT then note down the VAK and IA readings and plot the characteristics a! Same chip pressing on the screen third quad rant device, means it can be triggered by reaching its voltage... From step 2 for another value of I B is kept constant ( eg to a value 50.

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